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MBR1540CT 데이터시트(PDF) 1 Page - Diodes Incorporated |
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MBR1540CT 데이터시트(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page ![]() D S23013 Rev. F-2 1 of 2 MBR1530CT - MBR1560CT MBR1530CT - MBR1560CT 15A SCHOTTKY BARRIER RECTIFIER Features L M A N P D E K C B G 12 3 J HH Pin1+ Pin3+ Pin2- Case + TO-220AB Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.35 G 12.70 14.73 H 2.29 2.79 J 0.51 1.14 K 3.53 Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data · Case: Molded Plastic · Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 · Polarity: As Marked on Body · Marking: Type Number · Weight: 2.24 grams (approx.) · Mounting Position: Any Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR 1530CT MBR 1535CT MBR 1540CT MBR 1545CT MBR 1550CT MBR 1560CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current @ TC = 125 °C (Note 1) IO 15 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage Drop @ IF = 7.5A, TC = 125 °C @ IF = 7.5A, TC = 25 °C VFM 0.57 0.70 0.65 0.75 V Peak Reverse Current @ TC = 25 °C at Rated DC Blocking Voltage @ TC = 125 °C IRM 0.1 15 1.0 50 mA Typical Junction Capacitance (Note 2) Cj 300 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 1.7 °C/W Voltage Rate of Change (Rated VR) dV/dt 1000 10,000 V/ ms Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. |
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