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MBR3045PT 데이터시트(PDF) 1 Page - Diodes Incorporated |
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MBR3045PT 데이터시트(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page ![]() D S23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT MBR3030PT - MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Features A B E G J L M N P* *2 Places Q K S M H R D C TO-3P Dim Min Max A 3.20 3.50 B 4.59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 G 0.51 0.76 H 15.90 16.40 J 1.70 2.70 K 3.10 Æ 3.30 Æ L 3.50 4.51 M 5.20 5.70 N 1.12 1.22 P 1.93 2.18 Q 2.97 3.22 R 11.70 12.80 S 4.30 Typical All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data · Case: Molded Plastic · Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 · Polarity: As Marked on Body · Marking: Type Number · Weight: 5.6 grams (approx.) · Mounting Position: Any Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR 3030PT MBR 3035PT MBR 3040PT MBR 3045PT MBR 3050PT MBR 3060PT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current @ TC = 125 °C (Note 1) IO 30 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Voltage Drop @ IF = 20A, TC = 25 °C per element (Note 3) @ IF = 20A, TC = 125 °C VFM 0.65 0.60 0.75 0.65 V Peak Reverse Current @ TC = 25 °C at Rated DC Blocking Voltage, per element @ TC = 125 °C IRM 1.0 60 5.0 100 mA Typical Junction Capacitance (Note 2) Cj 700 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 1.4 2.0 K/W Voltage Rate of Change (Rated VR) dV/dt 10,000 V/µs Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Pulse width £300 ms, duty cycle £2%. |
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