MBR4040PT datasheet(1/2 Pages) DIODES

부품명	MBR4040PT

상세설명	40A SCHOTTKY BARRIER RECTIFIER

PDF	2 Pages

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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1 / 2 page

D

S23019 Rev. E-2

1 of 2

MBR4030PT - MBR4060PT

40A SCHOTTKY BARRIER RECTIFIER

Features

A

B

E

G

J

L

M

N

K

S

M

H

R

D

C

Q

P*

*2 Places

TO-3P

Dim

Min

Max

A

3.20

3.50

B

4.59

5.16

C

20.80

21.30

D

19.70

20.20

E

2.10

2.40

G

0.51

0.76

H

15.90

16.40

J

1.70

2.70

K

3.10

Æ

3.30

Æ

L

3.50

4.51

M

5.20

5.70

N

1.12

1.22

P

1.93

2.18

Q

2.97

3.22

R

11.70

12.80

S

4.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Schottky Barrier Chip

·

Guard Ring Die Construction for

Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

Voltage Drop

·

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

·

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

·

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Marking: Type Number

·

Weight: 5.6 grams (approx.)

·

Mounting Position: Any

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

4030PT

MBR

4035PT

MBR

4040PT

MBR

4045PT

MBR

4O50PT

MBR

4060PT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

35

40

45

50

60

V

RMS Reverse Voltage

VR(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

@ TC = 125

°C

(Note 1)

IO

40

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

400

A

Forward Voltage Drop

@ IF = 20A, TC = 25

°C

@ IF = 20A, TC = 125

°C

VFM

0.70

0.60

0.80

0.70

V

Peak Reverse Current

@ TC = 25

°C

at Rated DC Blocking Voltage

@ TC = 125

°C

IRM

1.0

100

mA

Typical Junction Capacitance

(Note 2)

Cj

1100

pF

Typical Thermal Resistance Junction to Case

(Note 1)

RqJc

1.4

K/W

Voltage Rate of Change (Rated VR)

dV/dt

10,000

V/

ms

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

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MBR4040PT 데이터시트(PDF) 1 Page - Diodes Incorporated

MBR4040PT 데이터시트(HTML) 1 Page - Diodes Incorporated

유사한 부품 번호 - MBR4040PT

유사한 설명 - MBR4040PT

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