MBR835 datasheet(1/2 Pages) DIODES

부품명	MBR835

상세설명	8.0A SCHOTTKY BARRIER RECTIFIER

PDF	2 Pages

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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1 / 2 page

D

S30030 Rev. B-4

1 of 2

MBR830-MBR860

MBR830 - MBR860

8.0A SCHOTTKY BARRIER RECTIFIER

Features

L

M

A

N

P

D

E

K

C

B

J

G

R

Pin 1

12

Pin 2

Case

TO-220AC

Dim

Min

Max

A

14.22

15.88

B

9.65

10.67

C

2.54

3.43

D

5.84

6.86

E

¾

6.35

G

12.70

14.73

J

0.51

1.14

K

3.53

Æ 4.09Æ

L

3.56

4.83

M

1.14

1.40

N

0.30

0.64

P

2.03

2.92

R

4.83

5.33

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Schottky Barrier Chip

·

Guard Ring Die Construction for

Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

Voltage Drop

·

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Application

·

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

·

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

·

Polarity: See Diagram

·

Weight: 2.24 grams (approx.)

·

Mounting Position: Any

·

Marking: Type Number

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

830

MBR

835

MBR

840

MBR

845

MBR

850

MBR

860

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

35

40

45

50

60

V

RMS Reverse Voltage

VR(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

(Note 1)

@ TC = 125

°C

IO

8.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

150

A

Repetitive Peak Reverse Surge Current

@ t

£ 2.0ms

IRRM

1.0

A

Forward Voltage Drop

@ IF = 8.0A, TC = 125

°C

@ IF = 8.0A, TC = 25

°C

@ IF = 16A, TC = 25

°C

VFM

0.57

0.70

0.84

0.70

0.80

0.95

V

Peak Reverse Current

@ TC = 25

°C

at Rated DC Blocking Voltage

@ TC = 125

°C

IRM

0.1

15

mA

Typical Junction Capacitance (Note 2)

Cj

250

pF

Typical Thermal Resistance Junction to Case (Note 1)

RqJC

3.0

K/W

Voltage Rate of Change (Rated VR)

dV/dt

1000

V/

ms

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

유사한 부품 번호 - MBR835

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유사한 설명 - MBR835

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Won-Top Electronics	SB820	37Kb / 3P	8.0A SCHOTTKY BARRIER RECTIFIER
Won-Top Electronics	SB820F	39Kb / 3P	8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER
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Won-Top Electronics	SB820	50Kb / 4P	8.0A SCHOTTKY BARRIER RECTIFIER
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	SB820F	50Kb / 4P	8.0A SCHOTTKY BARRIER RECTIFIER
Kersemi Electronic Co.,...	MBR830	428Kb / 2P	8.0A SCHOTTKY BARRIER RECTIFIER
	MBR835	428Kb / 2P	8.0A SCHOTTKY BARRIER RECTIFIER
	MBR860	428Kb / 2P	8.0A SCHOTTKY BARRIER RECTIFIER

More results

MBR835 데이터시트(PDF) 1 Page - Diodes Incorporated

MBR835 데이터시트(HTML) 1 Page - Diodes Incorporated

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