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MBR8100L 데이터시트(PDF) 1 Page - Diodes Incorporated |
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MBR8100L 데이터시트(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page ![]() D S30029 Rev. B-4 1 of 2 MBR870L-MBR8100L MBR870L - MBR8100L 8.0A SCHOTTKY BARRIER RECTIFIER Features L M A N P D E K C B J G R Pin 1 12 Pin 2 Case TO-220AC Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.35 G 12.70 14.73 J 0.51 1.14 K 3.53 Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 R 4.83 5.33 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data · Case: Molded Plastic · Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 · Polarity: See Diagram · Weight: 2.24 grams (approx.) · Mounting Position: Any · Marking: Type Number Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR 870L MBR 880L MBR 890L MBR 8100L Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectified Output Current (Note 1) @ TC = 125 °C IO 8.0 A Non-Repetitive Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 230 A Repetitive Peak Forward Surge Current @ t £ 5.0ms IFRM 850 A Forward Voltage Drop @ IF = 8.0A, TC = 25 °C @ IF = 8.0A, TC = 125 °C VFM 0.72 0.58 V Peak Reverse Current @ TC = 25 °C at Rated DC Blocking Voltage @ TC = 125 °C IRM 0.55 7.0 mA Typical Junction Capacitance (Note 2) Cj 350 pF Typical Thermal Resistance Junction to Case (Note 1) RqJC 2.0 K/W Voltage Rate of Change (Rated VR) dV/dt 10,000 V/ ms Operating and Storage Temperature Range Tj, TSTG -55 to +175 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. |
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