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MBRM3100-13 데이터시트(PDF) 3 Page - Diodes Incorporated

부품명 MBRM3100-13
상세설명  3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITE3
PDF  3 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MBRM3100-13 데이터시트(HTML) 3 Page - Diodes Incorporated

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DS30354 Rev. 3 - 1
3 of 3
MBRM3100
www.diodes.com
(Note 4)
Device
Packaging
Shipping
MBRM3100-13
POWERMITE
â3
5000/Tape & Reel
Marking Information
MBRM3100 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
YYWW(K)
MBRM3100
Ordering Information
Notes:
1. TA = TSOLDERING POINT, RqJS = 3.5°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 25-45°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
105-130°C/W.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
POWERMITE is a registered trademark of Microsemi Corporation.
UNDER DEVELOPMENT
0
0.5
1
1.5
2.5
2
3
3.5
4
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 DC Forward Current Derating
Note 1
Note 3
Note 2
0
1
2
3
4
0
1
2
3
4
5
6
7
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 6 Forward Power Dissipation
T = 125°C
j
NOTE 2
NOTE 3



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