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2SC4955-T2 데이터시트(PDF) 1 Page - NEC |
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2SC4955-T2 데이터시트(HTML) 1 Page - NEC |
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1 / 6 page ![]() © 1993 DATA SHEET SILICON TRANSISTOR Document No. P10377EJ2V0DS00 (2nd edition) (Previous No. TD-2406) Date Published July 1995 P Printed in Japan 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP. ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4955-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4955-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4955) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 180 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –64 to +150 ˚C PACKAGE DIMENSIONS in millimeters 1.5 2.8±0.2 0.65 –0.15 +0.1 3 2 1 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector |
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