| 전자부품 데이터시트 검색엔진 |
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L4938EP 데이터시트(PDF) 9 Page - STMicroelectronics |
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L4938EP 데이터시트(HTML) 9 Page - STMicroelectronics |
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9 / 20 page ![]() L4938ED, L4938EPD Electrical specifications Doc ID 17243 Rev 2 9/20 Table 7. OUT1, OUT2 Symbol Parameter Test condition Min. Typ. Max. Unit VOLi 1,2 Line regulation VS = 6 to 28 V; IO1 = 1 mA, IO2 = 5 mA, (after regulation setting) 20 mV Table 8. Enable input Symbol Parameter Test condition Min. Typ. Max. Unit VENL Enable input low voltage (output 2 active) -20 1 V VENH Enable input high voltage 1.4 20 V VENhyst Enable hysteresis 20 30 60 mV IEN LOW Enable input current low VEN = 0 -20 -8 -3 µA IEN HIGH Enable input current high VEN = 1.1 to 7 V; TJ < 130 °C; -1 0 1 µA VEN = 1.1 to 7 V; TJ = 130 to 150 °C; -10 0 10 µA Table 9. Reset circuit Symbol Parameter Test condition Min. Typ. Max. Unit VRT Reset threshold voltage(1) 1. The reset threshold can be programmed continuously from typ 3.8 V to 4.7 V by changing a value of an external resistor from pin PR to GND. RPR = ∞ 4.5 VO1- 0.3 VO1- 0.2 V RPR = 0 3.65 3.8 3.95 V VRTH Reset threshold hysteresis RPR = ∞ 30 60 120 mV tRD min Reset pulse delay CRES = 47 nF; t r ≤ 30 µs (2) 2. This is a minimum reset time according to the hysteresis of the comparator. Delay time starts with VOUT1 exceeding VRT. 40 60 100 ms tRD nom Reset pulse delay CRES = 47 nF (3) 3. This is the nominal reset time depending on the discharging limit of CT (saturation voltage) and the upper threshold of the timer comparator. Delay time starts with VOUT1 exceeding VRT. 60 100 140 ms tRR Reset reaction time CRES = 47 nF 10 50 150 µs ICT Pull down capability of the discharge circuit VOUT1 < VRT 3 6 15 mA ICT Charge current VOUT1 > VRT -1.3 -1 0.7 µA VRESL Reset output low voltage RRES = 10 KΩ to VOUT1 VOUT1 ≥ 1.5 V 0.4 V VRESH Reset output high leakage current VRES = 5 V 1 µA |
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