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IPS021STRR 데이터시트(PDF) 1 Page - International Rectifier |
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IPS021STRR 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 12 page ![]() Features • Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection IPS021(S) FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD 60148-K Description The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh envi- ronments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capa- bility is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Packages Product Summary Rds(on) 150m Ω (max) V clamp 50V Ishutdown 5A Ton/Toff 1.5 µs 3-Lead D2Pak IPS021S 3-Lead TO-220 IPS021 www.irf.com 1 Typical Connection S Q Load D S control IN R in series (if needed) Logic signal (Refer to lead assignment for correct pin configuration) |
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