SILICON TRANSISTOR

FEATURES

•

Low Current Consumption and High Gain

•

Mini-Mold package

EIAJ: SC-59

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5177-T1

3 000 units/reel

2SC5177-T2

3 000 units/reel

Remark Contact your NEC sales representatives to order samples

for evaluation (available in batches of 50).

Collector to Base Voltage

5V

Collector to Emitter Voltage

3V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

30

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

2SC5177

Document No. P12101EJ2V0DS00 (2nd edition)

(Previous No. TC-2474)

Date Published

November 1996 N

Printed in Japan

©

1994

DATA SHEET

NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

PACKAGE DIMENSIONS

(Units: mm)

CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Embossed tape, 8 mm wide, pin

No. 3 (collector) facing the

perforations

Embossed tape, 8 mm wide, pins

No. 1 (emitter) and No. 2 (base)

facing the perforations

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

2

1

2.8±0.2

1.5

0.65

+0.1

–0.15

3