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DF45210 데이터시트(PDF) 5 Page - Dynex Semiconductor |
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DF45210 데이터시트(HTML) 5 Page - Dynex Semiconductor |
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5 / 7 page ![]() DF452 5/7 1 10 100 1000 Rate of rise of reverse current dI R/dt - (A/µs) 100 10 1000 Conditions: T j = 125˚C, V R = 100V I F = 2000A I F = 1000A I F = 500A I F = 200A I F = 100A Fig.5 Typical reverse recovery current vs rate of fall of forward current 100 10 1 0.1 0.01 Time - (s) 0.1 0.01 0.001 d.c. Double side cooled Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) |
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