TIP50J3 datasheet(2/7 Pages) CYSTEKEC

2 / 7 page

CYStech Electronics Corp.

Spec. No. : C827J3

Issued Date : 2010.03.16

Revised Date : 2013.12.19

Page No. : 2/7

TIP50J3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

700

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

Collector Current (DC)

1.5

Collector Current (Pulse)

ICM

(Note 1)

Base Current (DC)

0.5

Base Current (Pulse)

IBM

1.5 (Note 1)

Power Dissipation @ TA=25°C

1.56 (Note 2)

Power Dissipation @ TC=25°C

Thermal Resistance, Junction to Ambient

RθJA

80 (Note 2)

Thermal Resistance, Junction to Case

RθJC

8.33

°C/W

Operating Junction Temperature Range

-55~+150

°C

Storage Temperature Range

Tstg

-65~+150

°C

Note : 1. Pulse test, PW ≤ 5ms.

2. When the device is mounted on a FR-4 PCB with minimum pad size recommended.

Characteristics (Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

700

IC=100μA

BVCEO

400

IC=10mA

BVEBO

IE=100μA

ICBO

μA

VCB=700V, IE=0

IEBO

μA

VEB=9V, IC=0

*VCE(SAT)

0.3

IC=500mA, IB=100mA

*VCE(SAT)

0.5

IC=1 A, IB=200mA

*VCE(SAT)

0.8

IC=1.5 A, IB=500mA

*RCE(SAT)

0.5

IC=1 A, IB=200mA

*VBE(SAT)

1.2

IC=1 A, IB=200mA

*VBE(ON)

1.2

VCE=10V, IC=1A

*hFE 1

100

VCE=10V, IC=300mA

*hFE 2

VCE=10V, IC=1A

MHz

VCE=10V, IC=100mA, f=100MHz

Cob

VCB=10V, IE=0A, f=1MHz

ton

1.1

tstg

0.7

μs

VCC=125V, RL=125Ω,IC=1A, IB1=-IB2=0.2A

*Pulse Test: Pulse Width

≤380μs, Duty Cycle≤2%

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