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SJV01N65B 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SJV01N65B
상세설명  N-Channel Enhancement Mode Power MOSFET
PDF  2 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SJV01N65B 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SJV01N65B
1A , 650V , RDS(ON) 14Ω
Ω
Ω
Ω
N-Channel Enhancement Mode Power MOSFET
07-May-2013 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
650
-
-
V
VGS=0, ID=250µA
Gate Threshold Voltage
1
VGS(th)
2
-
4
V
VDS=VGS, ID=250µA
Gate-Source Leakage Current
1
IGSS
-
-
±100
nA
VDS=0, VGS= ±20V
Drain-Source Leakage Current
IDSS
-
-
100
µA
VDS=600V, VGS=0
Static Drain-Source On-Resistance
1
RDS(ON)
-
-
14
VGS=10V, ID=0.6A
Forward On Voltage
1
VSD
-
-
1.5
V
IS=1A, VGS=0
Dynamic characteristics
2
Input Capacitance
Ciss
-
210
-
Output Capacitance
Coss
-
28
-
Reverse Transfer Capacitance
Crss
-
4.2
-
pF
VGS=0
VDS=25V
f=1.0 MHz
Switching characteristics
2
Total Gate Charge
Qg
-
5
-
Gate-Source Charge
Qgs
-
2.7
-
Gate-Drain Charge
Qgd
-
2
-
nC
VDS=480V,
VGS=10V,
ID=4A
Turn-on Delay Time
Td(on)
-
8
-
Rise Time
Tr
-
21
-
Turn-off Delay Time
Td(off)
-
18
-
Fall Time
Tf
-
24
-
nS
VDD=300V
ID=1A
VGS=10V
RG=18
Notes:
1.
Pulse Test : Pulse width≦300µs, duty cycle≦2%.
2.
These parameters have no way to verify.



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