| 전자부품 데이터시트 검색엔진 |
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2SC5186 데이터시트(PDF) 1 Page - NEC |
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2SC5186 데이터시트(HTML) 1 Page - NEC |
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1 / 12 page ![]() © 1994 DATA SHEET SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER 2SC5186 50 units/box Embossed tape, 8 mm wide, 2SC5186-T1 3 000 units/reel Pin 3 (Collector) facing the perforations. * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 90 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C Document No. P12110EJ2V0DS00 (2nd edition) (Previous No. TC-2483) Date Published November 1996 N Printed in Japan 1.6 ± 0.1 0.8 ± 0.1 2 1 3 PACKAGE DIMENSIONS (Units: mm) PIN CONNECTIONS 1. Emitter 2. Base 3. Collector |
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