BD135 datasheet(2/2 Pages) SECOS

부품명	BD135

상세설명	NPN Plastic Encapsulated Transistor

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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2 / 2 page

BD135 / BD137 / BD139

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

07-Mar-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base

Breakdown Voltage

BD135

V(BR)CBO

45

-

V

IC=0.1mA, IE=0

BD137

60

-

BD139

80

-

Collector to Emitter

Breakdown Voltage

BD135

VCEO(SUS)

*

45

-

V

IC=0.03A, IB=0

BD137

60

-

BD139

80

-

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=0.1mA, IC=0

Collector Cut–Off Current

ICBO

-

0.1

µ

A

VCB=30V, IE=0

Emitter Cut–Off Current

IEBO

-

10

µ

A

VEB=5V, IC=0

DC Current Gain

hFE (1)

*

40

-

250

VCE=2V, IC=150mA

hFE (2)

*

25

-

VCE=2V, IC=5mA

hFE (3)

*

25

-

VCE=2V, IC=500mA

Collector to Emitter Saturation Voltage

VCE(sat)

*

-

0.5

V

IC=500mA, IB=50mA

Collector Output Capacitance

VBE

*

-

1

V

VCE=2V, IC=500mA

*Pulse test：pulse width≦350µs, duty cycle≦2.0%

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