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2SD950 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD950 데이터시트(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD950 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500m A;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.75 A 5.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=0.75 A 1.5 V VCB=750V;IE=0 50 µA ICBO Collector cut-off current VCB=1500V;IE=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=2A ; VCE=10V 3 VF Diode forward voltage IF=4A 1.7 V tf Fall time 0.9 µs ts Storage time IC=2A;IBend=0.75A;LB=10µH 11 µs |
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