| 전자부품 데이터시트 검색엔진 |
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GP401LSS18 데이터시트(PDF) 8 Page - Dynex Semiconductor |
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GP401LSS18 데이터시트(HTML) 8 Page - Dynex Semiconductor |
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8 / 11 page ![]() GP401LSS18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/11 Fig.13 Diode typical forward characteristics Fig.14 Reverse bias safe operating area Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance 0 100 200 300 400 500 600 700 800 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Foward voltage, VF - (V) Tj = 125˚C Tj = 25˚C 0 100 200 300 400 500 600 700 800 900 1000 0 400 800 1200 1600 2000 Collector-emitter voltage, Vce - (V) Tcase = 125˚C Vge = ±15V Rg(min) = 4.3Ω Rg(min) : Minimum recommended value 1 10 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) 50 µs 100 µs IC max. (single pulse) tp = 1ms 0.1 1 10 100 1 10 1000 100 10000 Pulse width, tp - (ms) Diode Transistor |
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