GP500LSS06S

2/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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THERMAL AND MECHANICAL RATINGS

Symbol

Conditions

DC junction to case

50

Max.

-

Min.

Parameter

Units

R

th(j-c)

Thermal resistance - transistor

T

stg

Storage temperature range

Transistor

150

125

-

- 40

R

th(c-h)

Thermal resistance - Case to heatsink

Mounting torque 5Nm (with mounting grease)

15

-

-

Mounting - M6

Nm

5

-

-

T

j

Junction temperature

Screw torque

Diode

125

-

Electrical connections - M4

Nm

2

-

Electrical connections - M6

Nm

5

-

Thermal resistance - diode

DC junction to case

125

-

-

R

th(j-c)

V

CES

Collector-emitter voltage

-

DC, T

1ms, T

700

A

Test Conditions

Symbol

I

C

Gate-emitter voltage

V

600

Units

V

±20

1400

Max.

Parameter

Collector current

2500

Maximum power dissipation

P

max

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

Isolation voltage

V

isol

V

2500

V

V

GES

A

I

C(PK)

W

(Transistor)

DC, T

500

A

1ms, T

A

1000

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.

In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions

should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T