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2SC5369 데이터시트(PDF) 1 Page - NEC

부품명 2SC5369
상세설명  NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
PDF  12 Pages
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2SC5369
SILICON TRANSISTOR
Document No. P11644EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
FEATURES
• High fT
14 GHz TYP.
• High gain
| S21e | 2 = 14 dB TYP.
@f = 2 GHz, VCE = 3 V, IC = 10 mA
• NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA
• 6-pin small mini mold package
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
TI
150
°C
Storage Temperature
Tstg
–65 to +150
°C
PACKAGE DIMENSION (in mm)
PIN CONNECTIONS
1. Emitter
4. Emitter
2. Emitter
5. Emitter
3. Base
6. Collector
NPN EPITAXIAL SILICON TRANSISTOR FOR
MICROWAVE AMPLIFICATION
©
1996
PRELIMINARY DATA SHEET
2.1±0.1
1.25±0.1


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