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MF70 데이터시트(PDF) 2 Page - Dynex Semiconductor

부품명 MF70
상세설명  Fast Recovery Diode
PDF  8 Pages
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제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MF70 데이터시트(HTML) 2 Page - Dynex Semiconductor

  MF70 Datasheet HTML 1Page - Dynex Semiconductor MF70 Datasheet HTML 2Page - Dynex Semiconductor MF70 Datasheet HTML 3Page - Dynex Semiconductor MF70 Datasheet HTML 4Page - Dynex Semiconductor MF70 Datasheet HTML 5Page - Dynex Semiconductor MF70 Datasheet HTML 6Page - Dynex Semiconductor MF70 Datasheet HTML 7Page - Dynex Semiconductor MF70 Datasheet HTML 8Page - Dynex Semiconductor  
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MF70
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SURGE RATINGS
Conditions
Max.
Units
10ms half sine; with 100% V
RRM, Tj = 125
oC
700
A
10ms half sine; T
j = 125
oC
2450
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-
0.2
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 3.5Nm
with mounting compound
Symbol
Parameter
-
0.37
oC/W
Min.
-
125
oC
˚C
125
-55
Storage temperature range
T
stg
Forward (conducting)
-
125
oC
T
vj
Virtual junction temperature
Reverse (blocking)
Nm
3.8
3.2
-
Mounting torque
CHARACTERISTICS
t
rr
10
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RM
Peak reverse current
Reverse recovery time
-
300
ns
At V
RRM, Tcase = 100
oC-
mA
At 210A peak, T
case = 25
oC
-
2.0
V
Conditions
Max.
I
F = 1A, diRR/dt = 25A/µs
T
case = 25
oC, V
R = 100V
Q
r
Recovered charge
t
rr
Reverse recovery time
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
µs, T
j = 125
oC80
-
V
At T
vj = 125
oC
-
3.34
m
Ω
At T
vj = 125
oC
-
1.3
V
-
915
ns
-26
µC
I
F = 100A, diRR/dt = 100A/µs
T
case = 25
oC, V
R = 100V
Use torque wrench



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