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MP02XX280 데이터시트(PDF) 2 Page - Dynex Semiconductor |
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MP02XX280 데이터시트(HTML) 2 Page - Dynex Semiconductor |
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2 / 9 page ![]() MP02 XX 280 Series 2/9 Symbol Parameter Conditions Max. Units A V R = 0 V R = 50% VRRM V R = 0 V R = 50% VRRM A 2s A 2s A 10ms half sine; T j = 150 oC 10ms half sine; T j = 150 oC Surge (non-repetitive) on-state current I FSM I 2t for fusing I 2t Symbol Parameter Conditions Units oC/W R th(j-c) Virtual junction temperature T vj oC T sto Storage temperature range Mounting torque = 6Nm with mounting compound 3 phase halfwave dc Commoned terminals to base plate AC RMS, 1min, 50Hz Max. 0.22 0.23 R th(c-hs) Isolation voltage Symbol Parameter Conditions 1.1 mA Forward voltage 30 V FM I RM Peak reverse current At V RRM, Tj = 150 oC At 400A, T case = 25 oC V TO Threshold voltage V 0.80 m Ω 0.6 At T vj = 150 oC At T vj = 150 oC r T On-state slope resistance Thermal resistance - junction to case per Diode Thermal resistance - case to heatsink per Diode oC/W V isol 2.5 6000 4800 180000 115000 oC/W oC/W 0.21 0.07 -40 to 150 150 oC kV Units Max. V THERMAL & MECHANICAL RATINGS CHARACTERISTICS SURGE RATINGS - PER ARM |
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