MP02 XXX 190 Series

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Symbol

Parameter

Conditions

Max.

Units

V

V

V

V

A

I

Surge (non-repetitive) on-state current

I

TSM

I

6800

A

A

5500

231000

150000

A

Symbol

Parameter

Linear rate of rise of off-state voltage

V

mA

V/

µs

On-state voltage

V

TM

I

Peak reverse and off-state current

To 60% V

At V

At 1000A, T

Symbol

Parameter

Conditions

Units

R

th(c-hs)

R

th(j-c)

Virtual junction temperature

T

vj

T

sto

Storage temperature range

Mounting torque = 6Nm

with mounting compound

3 phase

halfwave

dc

Commoned terminals to base plate

AC RMS, 1min, 50Hz

Max.

Rate of rise of on-state current

V

T(TO)

Threshold voltage

V

From 67% V

Repetitive 50Hz

Gate source 20V, 20

Ω

Rise time 0.5

µs, T

m

Ω

At T

At T

r

T

On-state slope resistance

* Higher dV/dt values available, contact factory for particular requirements.

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

dI/dt

dV/dt

Thermal resistance - case to heatsink

per Thyristor or Diode

Isolation voltage

V

isol

kV

Thermal resistance - junction to case

per Thyristor or Diode

-40 to 125

0.17

0.18

0.19

0.07

125

2.5

1.75

30

200*

A/

µs

100

1.05

0.80

Units

Max.

Conditions

10ms half sine;

T

10ms half sine;

T

SURGE RATINGS - PER ARM

THERMAL & MECHANICAL RATINGS

DYNAMIC CHARACTERISTICS