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MP04HB910 데이터시트(PDF) 3 Page - Dynex Semiconductor |
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MP04HB910 데이터시트(HTML) 3 Page - Dynex Semiconductor |
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3 / 7 page ![]() 3/7 www.dynexsemi.com MP04HB910 Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to the impedance of the busbars from the terminals to the semiconductor. CHARACTERISTICS Peak reverse current Parameter µC 1600 At T vj = 150˚C - Q S Total stored charge I F = 1000A, dIRR/dt = 3A/µs T case = 150˚C, VR = 100V Symbol I RRM I RR Peak recovery current V TO Threshold voltage. See Note 1. r T Slope resistance. See Note 1. 0.29 m Ω At T vj = 150˚C - 0.7 V -85 A - At V RRM, Tcase = 150 oC- 50 mA Conditions Min. Max. Units CURVES Fig.3 Maximum (limit) forward characteristics 0.5 0.75 1.0 1.5 1.25 Instantaneous forward voltage VF - (V) 0 500 1000 1500 2000 2500 Measured under pulse conditions Tj = 25˚C Tj = 150˚C Fig.4 Power dissipation curves 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 1200 1400 1600 1800 Forward current, (Average, per arm) IF(AV) - (A) 30° 60° 90° 120° 180° DC |
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