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TF708 데이터시트(PDF) 12 Page - Dynex Semiconductor |
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TF708 데이터시트(HTML) 12 Page - Dynex Semiconductor |
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12 / 13 page ![]() TF708..B 12/13 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Ø34 nom Ø1.5 Cathode Gate Anode Ø34 nom Ø54 max Ø57.8 max Nominal weight: 310g Clamping force: 15kN ±10% Lead length: 250mm Package outine type code: MU171 Cathode tab ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Gate triggering and the use of gate characteristics AN4840 Recommendations for clamping power semiconductors AN4839 The effect of temperature on thyristor performance AN4870 Thyristor and diode measurement with a multi-meter AN4853 Turn-on performance of thyristors in parallel AN4999 Use of V TO , r T on-state characteristic AN5001 |
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