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ABR5000 데이터시트(PDF) 1 Page - EIC discrete Semiconductors

부품명 ABR5000
상세설명  AVALANCHE BRIDGE RECTIFIERS
PDF  2 Pages
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제조업체  EIC [EIC discrete Semiconductors]
홈페이지  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

ABR5000 데이터시트(HTML) 1 Page - EIC discrete Semiconductors

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ABR5000 - ABR5010
AVALANCHE BRIDGE
RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
ABR
5000
ABR
5001
ABR
5002
ABR
5004
ABR
5006
ABR
5008
ABR
5010
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Minimum Avalanche Breakdown Voltage at 100
µA
VBO(min.)
100
150
250
450
700
900
1100
Volts
Maximum Avalanche Breakdown Voltage at 100
µA
VBO(max.)
550
600
700
900
1150
1350
1550
Volts
Maximum Average Forward Current Tc = 50
°C
IF(AV)
50
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
IFSM
400
Amps.
Rating for fusing at ( t < 8.3 ms. )
I
2
t
660
A
2S
Maximum Forward Voltage per Diode at IF = 25 Amps.
VF
1.1
Volts
Maximum DC Reverse Current
Ta = 25
°C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100
°C
IR(H)
200
µA
Typical Thermal Resistance (Note 1)
RθJC
1
°C/W
Operating Junction Temperature Range
TJ
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Notes :
1 ) Thermal resistance from junction to case with units mounted on heatsink.
UPDATE : NOVEMBER 1,1998
RATING
Metal Heatsink
Dimensions in inches and ( millimeters )
BR50
φ
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
1.130(28.70)
1.120(28.40)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
0.100(2.50)
0.090(2.30)
0.310(7.87)
0.280(7.11)


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