Elektronische Bauelemente

SSF2102

Ω

Ω

Ω

N-Channel Enhancement Mode Power MOSFET

14-Jan-2014 Rev.A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

20

-

-

V

Gate-Threshold Voltage

0.65

0.95

1.2

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

µA

Forward Transconductance

1

-

8

-

S

Diode Forward Voltage

-

0.76

1.2

V

-

45

60

Static Drain-Source On-Resistance

1

-

70

115

m

Dynamic Characteristics

Total Gate Charge

-

4

-

Gate-Source Charge

-

0.65

-

Gate-Drain Change

-

1.5

-

nC

Input Capacitance

2

-

300

-

Output Capacitance

2

-

120

-

Reverse Transfer Capacitance

2

-

80

-

pF

f =1.0MHz

Switching Parameters

Turn-on Delay Time

2

-

7

-

Rise Time

2

-

55

-

Turn-off Delay Time

2

-

16

-

Fall Time

2

-

10

-

nS

Note:

1.

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

2.

These parameters have no way to verify.