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RC2012F4990CS 데이터시트(PDF) 2 Page - Samsung semiconductor

부품명 RC2012F4990CS
상세설명  Supplier Samsung electro-mechanics
PDF  2 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

RC2012F4990CS 데이터시트(HTML) 2 Page - Samsung semiconductor

  RC2012F4990CS Datasheet HTML 1Page - Samsung semiconductor RC2012F4990CS Datasheet HTML 2Page - Samsung semiconductor  
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Bending test
Less than ±(0.5%+0.05Ω)of the initial value 50mΩ Max
3mm of bending shall be applied
No evidence of mechanical damage
for 5sec.
Adhesive strength
No mechanical damage or sign of disconnection
Test strengh : 5N
of termination
Test time: Applying pressure for 10seconds
Resistance to
Less than ±(1%+0.05Ω)of the initial value
50mΩ Max
260±5℃ , 10 sec
soldering heat
No evidence of mechanical damage
Anti-Vibration
Less than ±(1%+0.05Ω)of the initial value
50mΩ Max
Test amplitude : 1.5mm
test
No evidence of mechanical damage
Frequency 10㎐-55㎐-10㎐ / 2hr in x,y,z direction.
Temperature
Less than ±(1%+0.1Ω)of the initial value
50mΩ Max
100cycles, -55℃/30min ↔125℃/30min
cycle
No evidence of mechanical damage
sweep time:5min
Load life
Less than ±(3%+0.1Ω)of the initial value
50mΩ Max
Test voltage: rated voltage / 70±2℃
No evidence of mechanical damage
1,000hours(90min:On , 30min:Off)
Low Temp.
Less than ±(3%+0.1Ω)of the initial value
50mΩ Max
Dwell in -55℃ chamber without loading
Exposure
No evidence of mechanical damage
for 1,000hours
High Temp
Less than ±(3%+0.1Ω)of the initial value
50mΩ Max
Dwel in 125℃ or 155℃ chamber without loading
Exposure
No evidence of mechanical damage
for 1,000hours
Moisture
Less than ±(3%+0.1Ω)of the initial value
50mΩ Max
Test voltage: rated voltage / 40±2℃
Resistance
No evidence of mechanical damage
1,000hours(90min:On,30min:Off) / 90~95% RH
C. Recommended Soldering method :
Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max )
* For the more detail Specification, Please refer to the samsung chip RESISTOR catalogue.
Judgement
Test condition



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