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SCS40STN 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 SCS40STN
상세설명  Silicon Epitaxial Planar Schottky Barrier Rectifiers
PDF  2 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCS40STN 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SCS40STN
0.12 A, 40 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
13-Dec-2013 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection
FEATURES
Low diode capacitance
Low forward voltage
Guard ring protected
High breakdown voltage
APPLICATION
Ultra high-speed switching
Voltage clamping
Mobile communication ,digital (still) cameras ,
PDAs and PCMCIA cards
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
WBFBP-02C
10K
7 inch
MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified)
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
40
V
Forward continuous current
IF
120
mA
Peak forward surge current @ Tp< 10ms
IFSM
200
mA
Junction, Storage Temperature Range
TJ, TSTG
150, -55 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
-
-
0.38
IF=1mA
-
-
0.5
IF=10mA
Forward Voltage
VF
-
-
1
V
IF=40mA
-
-
1
VR=30V
Reverse Current
1
IR
-
-
10
μA
VR=40V
Diode capacitance
Cd
-
-
5
pF
VR =0, f=1.0MHz
Note:
1. Pulse Test: tp=300μs; δ=0.02.
WBFBP-02C
S6
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.950
1.050
G
0.275
0.325
B
0.550
0.650
H
0.275
0.325
C
0.450
0.550
J
0.275
0.325
D
0.450 REF.
K
0.675
0.725
E
0.400 REF.
L
0.010
0.070
F
0.275
0.325
M
0.010 REF.


A
C
B
F
M
M
G
J
H
K
E
D
L


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