Elektronische Bauelemente

SSI2007

N-Ch: 0.8A, 20V, RDS(ON) 260 m

P-Ch: -0.56A, -20V, RDS(ON) 800 m

N & P-Ch Enhancement Mode Power MOSFET

17-Dec-2013 Rev. A

Page 1 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTIONS

The SSI2007 is N and P Channel enhancement MOS Field

Effect Transistor. Uses advanced trench technology and

design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load

switch and level shift.

MECHANICAL DATA

Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

APPLICATION

DC-DC converter circuit

Load Switch

DEVICE MARKING:

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-563

3K

7’ inch

Part Number

N-Channel

P-Channel

Parameter

Symbol

10S

Steady State

10S

Steady State

Unit

Drain – Source Voltage

20

-20

V

Gate – Source Voltage

±6

V

0.88

0.8

-0.64

-0.56

Continuous Drain Current

1

0.71

0.64

-0.51

-0.45

A

0.37

0.3

0.37

0.29

Power Dissipation

1

0.23

0.19

0.23

0.18

W

0.76

0.69

-0.54

-0.5

Continuous Drain Current

2

0.6

0.55

-0.43

-0.4

A

0.27

0.22

0.27

0.22

Power Dissipation

2

0.17

0.14

0.17

0.14

W

Pulsed Drain Current

3

1.4

-1

A

Maximum Junction-to-Lead

260

°C / W

Operating Junction & Storage Temperature

Range

150, -55~150

°C

SOT-563

07*

E

F

J

B

C

D

G

A

H

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.50

1.70

F

0.09

0.16

B

1.50

1.70

G

0.45

0.55

C

0.525

0.60

H

0.17

0.27

D

1.10

1.30

J

0.10

0.30

E

-

0.05

Date Code

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