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SSRF02N80SL 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSRF02N80SL
상세설명  N-Ch Enhancement Mode Power MOSFET
PDF  5 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSRF02N80SL 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSRF02N80SL
2A , 800V , RDS(ON) 6.1
N-Ch Enhancement Mode Power MOSFET
03-Dec-2013 Rev. A
Page 2 of 5
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
800
-
-
V
VGS=0, ID= 250µA
Gate-Threshold Voltage
VGS(th)
2
-
4
V
VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±30V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
1
µA
VDS=800V, VGS=0
Static Drain-Source On-Resistance
RDS(ON)
-
4.4
6.1
VGS=10V, ID=1A
Total Gate Charge
1.2
Qg
-
9.65
-
Gate-Source Charge
1.2
Qgs
-
2.32
-
Gate-Drain Change
1.2
Qgd
-
4.57
-
nC
ID=2A
VDS=640V
VGS=10V
Turn-on Delay Time
1.2
Td(on)
-
12.64
-
Rise Time
1.2
Tr
-
22.92
-
Turn-off Delay Time
1.2
Td(off)
-
25.92
-
Fall Time
1.2
Tf
-
26.64
-
nS
VDD=400V
ID=2A
RG=25
Input Capacitance
Ciss
-
383
-
Output Capacitance
Coss
-
39
-
Reverse Transfer Capacitance
Crss
-
1.6
-
pF
VGS =0
VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
VSD
-
-
1.4
V
IS=2A, VGS=0
Continuous Source Current
IS
-
-
2
A
Pulsed Source Current
ISM
-
-
8
A
Integral Reverse P-N
Junction Diode in the
MOSFET
Reverse Recovery Time
1.
Trr
-
360.5
-
ns
Reverse Recovery Charge
1.
Qrr
-
1.17
-
µC
IS=2A,VGS=0,
dlF/dt=100A/µS
Notes:
1.
Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2.
Essentially independent of operating temperature.



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