Elektronische Bauelemente

SMS2020

830mA, 20V

N-Channel MOSFET

21-May-2013 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

THERMAL RESISTANCE RATINGS

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±5

μA

Gate-Threshold Voltage

0.45

0.58

0.85

V

-

220

310

-

260

360

Drain-Source On Resistance

-

320

460

mΩ

Forward Transconductance

-

2

-

S

Body-Drain Diode Ratings

Diode Forward On–Voltage

0.5

0.7

1.5

V

Dynamic Characteristics

Input Capacitance

-

50

-

Output Capacitance

-

13

-

Reverse Transfer Capacitance

-

8

-

pF

f=100KHz

Total Gate Charge

-

1.15

-

Threshold Gate Charge

-

0.06

-

Gate-to-Source Charge

-

0.15

-

Gate-to-Drain Charge

-

0.23

-

nC

Turn-on Delay Time

-

22

-

Rise Time

-

80

-

Turn-off Delay Time

-

700

-

Fall Time

-

380

-

nS

Rating

Parameter

Symbol

Typ.

Max.

Unit

Single Operation

T≦10S

270

325

Junction-to-Ambient Thermal Resistance

1

Steady State

320

385

T≦10S

360

420

Junction-to-Ambient Thermal Resistance

2

Steady State

425

520

Junction-to-Case Thermal Resistance

Steady State

260

300

°C / W