SSPS920NE datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSPS920NE

7.1 A, 20 V, RDS(ON) 20 mΩ

Ω

Dual-N Channel Mode Power MOSFET

28-Jun-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

0.4

VDS= VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±8V

µA

VDS=16V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=16V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

VDS= 5V, VGS=4.5V

VGS= 4.5V, ID=5.7A

VGS= 2.5V, ID=5.2A

Drain-Source On-Resistance

RDS(ON)

VGS= 1.8V, ID= 4.8A

Forward Transconductance

gfs

VDS= 10V, ID=5.7A

Diode Forward Voltage

VSD

0.71

IS=1.1A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

0.9

Gate-Drain Charge

Qgd

2.5

ID= 5.7A

VDS= 10V

VGS= 4.5V

Input Capacitance

Ciss

439

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS =0

VDS=15V

f =1.0MHz

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDS= 10V

ID= 5.7A

VGEN= 4.5V

RL= 1.8

RGEN= 6

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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