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2SD1615 데이터시트(PDF) 3 Page - NEC |
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2SD1615 데이터시트(HTML) 3 Page - NEC |
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3 / 4 page ![]() 2SD1615, 2SD1615A 3 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 200 500 1000 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT IC – Collector Current – A VEC = 2.0 V 1 2 5 10 20 50 100 2 5 10 20 50 100 OUTPUT CAPCITANCE vs. COLLECTOR TO BASE VOLTAGE VCB – Collector to Base Voltage – V IE = 0 f = 1.0 MHZ 0.01 0.02 0.05 0.1 0.2 0.5 1 IC – Collector Current – A 0.05 0.1 0.2 0.5 1 2 SWITCHING TIME vs. COLLECTOR CURRENT VCC = 10 V IC = 10.IBI = –10.IB2 VBE(off) = –2 to 3 V PW = 2 s Duty Cycle ≤ 2 % µ .. tf ton tstg REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 |
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