6 - 14 GHz

Rev. V2

MASW-011021

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

1

Features

 Specified from 8 GHz to 12 GHz

 Low Insertion Loss

 High Isolation

 Low Parasitic Capacitance and Inductance

 Surface Mountable, Fully Monolithic Die

 Glass Encapsulated Construction

 Silicon Nitride Passivation

 Polymer Scratch Protection

 RoHS* Compliant

Description

This device is a Surmount™ X-Band monolithic

SPDT switch designed for high power, high

performance applications. This Surface Mount

chipscale configuration is designed with minimal

parasitics usually associated with hybrid MIC

designs incorporating beam lead and/or bondable

PIN diodes that require chip and wire assembly.

This device is

fabricated

using M/A-COM

Technology Solutions’ patented HMIC™ (Heterolithic

Microwave Integrated Circuit) process, US Patent

5,268,310. This process allows the incorporation of

silicon pedestals that form series and shunt diodes

and/or vias by embedding them in low loss, low

dispersion glass.

Selective backside metalization is applied producing

a surface mount device. The topside is fully

encapsulated with silicon nitride and has an

additional polymer layer for scratch and impact

protection.

These

protective

coatings

prevent

damage to the junction and the anode airbridge

during handling and assembly.

Functional Schematic

1. The exposed pad centered on the chip bottom must be

connected to RF and DC ground.

*Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Die Bond Pad Layout

Pin

Function

J1

RF C

J2

RF 1

J3

RF 2

B1

Bias 1

B2

Bias 2

Part Number

Package

MASW-011021-14010G

25 piece gel pack

MASW-011021-001SMB

Sample Test Board

2. Reference Application Note M513 for reel size information.