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SSG4902NA 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSG4902NA
상세설명  Dual N-Channel Mode Power MOSFET
PDF  4 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4902NA 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSG4902NA
6.4 A, 60 V, RDS(ON) 41 mΩ
Ω
Ω
Ω
Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
15-Mar-2012 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate Threshold Voltage
VGS(th)
1
-
-
V
VDS=VGS, ID=250µA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VDS=0, VGS=20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
µA
VDS=60V, VGS=0
-
-
10
µA
VDS=60V, VGS=0, TJ= 55°C
On-State Drain Current
1
ID(on)
20
-
-
A
VDS=5V, VGS=10V
Drain-Source On-Resistance
1
RDS(ON)
-
-
41
m
VGS=10V, ID=6.4A
-
-
52
VGS=4.5V, ID=5.6A
Forward Transconductance
1
gfs
-
11
-
S
VDS=15V, ID=6.4A
Diode Forward Voltage
VSD
-
-
1.2
V
IS=2A, VGS=0
Dynamic
2
Total Gate Charge
Qg
-
12.5
-
nC
ID=6.4A
VDS=30V
VGS=4.5V
Gate-Source Charge
Qgs
-
2.4
-
Gate-Drain Charge
Qgd
-
2.6
-
Switching
Turn-On Delay Time
Td(on)
-
11
-
nS
VDD=30V
ID=1A
VGEN=10V
RL=30
Rise Time
Tr
-
8
-
Turn-Off Delay Time
Td(off)
-
19
-
Fall Time
Tf
-
6
-
Notes:
1
Pulse test：PW
300µs duty cycle
2%
≦
≦
.
2
Guaranteed by design, not subject to production testing.



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