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BU508DF 데이터시트(PDF) 2 Page - Savantic, Inc. |
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BU508DF 데이터시트(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU508DF CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V VCE(sat) Collector-emitter saturation voltage IC=4.5A; IB=1.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V IEBO Emitter cut-off current VEB=5V; IC=0 300 mA ICES Collector cut-off current VCB=BVCBO IE=0 TC=125 1.0 2.0 mA hFE DC current gain IC=0.5A ; VCE=5V 10 30 fT Transition frequency IC=0.1A ; VCE=5V 7 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 125 pF VF Diode forward voltage IF=4.5A 1.6 2.0 V |
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