CMMT495 datasheet(1/3 Pages) CDIL

부품명	CMMT495

상세설명	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CMMT495

SOT-23

Formed SMD Package

Marking Code is =495

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNITS

Collector Base Voltage

VCBO

V

Collector Emitter Voltage

VCEO

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

A

Collector Current Peak

ICM

A

Base Current

IB

mA

Power Dissipation @ Ta=25ºC

PD

mW

Operating And Storage Junction

Temperature Range

Tj, Tstg

ºC

Electrical Characterstics (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Voltage

VCBO

IC=100µA, IE=0

170

V

Collector Emitter Voltage

*VCEO(sus)

IC=10mA, IB=0

150

V

Emitter Base Voltage

VEBO

IE=100µA, IC=0

5

V

Collector Cut Off Current

ICBO

VCB=150V, IE=0

100

nA

Collector Cut Off Current

ICES

VCE=150V, VBE=0

100

nA

Emitter Cut Off Current

IEBO

VEB=4V, IC=0

100

nA

IC=250mA, IB=25mA

0.2

V

IC=500mA, IB=50mA

0.3

V

Base Emitter On Voltage

*VBE(on)

VCE =10V, IC=500mA

1.0

V

DC Current Gain

hFE

VCE =10V, IC=1mA

100

*VCE =10V, IC=250mA

100

300

*VCE =10V, IC=500mA

50

VCE =10V, IC=1A

10

Transition Frequency

fT

VCE=10V, IC=50mA, f=100MHz

100

MHz

Output Capacitance

Cobo

VCB=10V, f=1MHz

10

pF

*Pulse Test: Pulse Width =300

µµs, Duty Cycle <2%

V

2

200

VALUE

170

150

5

1

500

- 55 to +150

Collector Emitter Saturation

Voltage

*VCE(sat)

Base Emitter Saturation Voltage

*VBE(sat)

IC=500mA, IB=50mA

1.0

PIN CONFIGURATION (NPN)

1 = BASE

2 = EM ITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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