RoHS Compliant

Rev V6

MA4SPS402

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Visit www.macomtech.com for additional data sheets and product informa-

tion.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product MA-COM Technical

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaran-

teed.

PRELIMINARY:

Data Sheets contain information regarding a product MA-COM Technical

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

Features

♦ Surface Mount

♦ No Wire Bonding Required

♦ Rugged Silicon-Glass Construction

♦ Silicon Nitride Passivation

♦ Polymer Scratch Protection

♦ Low Parasitic Capacitance and Inductance

♦ Higher Average and Peak Power Handling

♦ RoHS Compliant

Description

This device is a Silicon-Glass PIN diode chip

fabricated with M/A-COM Technology Solutions pat-

process. This device features two

silicon pedestals embedded in a low loss, low dis-

persion glass. The diode is formed on the top of one

pedestal and connections to the backside of the de-

vice are facilitated by making the pedestal sidewalls

electrically

conductive.

Selective

backside

metallization is applied producing a surface mount

device. This vertical conic topology provides for

exceptional heat transfer from the active area. The

topside is fully encapsulated with silicon nitride and

has an additional polymer layer for scratch and

impact protection. These protective coatings prevent

damage to the junction and the anode air-bridge

during handling and assembly.

Applications

These surmount devices are suitable for usage in

moderate incident power (5W C.W.) or higher

incident peak power (50W) series, shunt, or

series-shunt switches. Lower parasitic inductance,

0.45nH, and excellent RC constant (0.23pS), make

the devices ideal for higher frequency switch

elements

compared

to

their

plastic

device

counterparts.

Parameter

Absolute Maximum

Forward Current

250mA

Reverse Voltage

-100V

Operating Temperature

-55°C to +125°C

Storage Temperature

-55 °C to +150°C

Junction Temperature

+175°C

Dissipated Power

( RF & DC )

1W

Mounting Temperature

+280°C for 30 seconds

(unless otherwise specified)

1. Backside metal: 0.1 µM thick.

2. Yellow hatched areas indicate backside ohmic gold

DIM

INCHES

MM

Min.

Max.

Min.

Max.

A

0.046 0.051

1.170

1.290

B

0.017 0.021

0.432

0.533

C

0.004 0.006

0.102

0.203

D

0.015 0.017

0.381

0.432

E

0.014 0.016

0.356

0.406