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Visit www.macom.com for additional data sheets and product information.

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or

information contained herein without notice.

V8

MA4SW110

MA4SW210

MA4SW310

ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-

ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has

been fixed. Engineering samples and/or test data may be available. Commitment to produce in

volume is not guaranteed.

HMIC™ Silicon PIN Diode Switches

RoHS Compliant

Features

♦ Broad Bandwidth

♦ Specified from 50 MHz to 20 GHz

♦ Usable from 50 MHz to 26.5 GHz

♦ Lower Insertion Loss and Higher Isolation than

Comparable pHEMT/Discrete Component Designs

♦ Rugged Design Fully Monolithic

♦ Glass Encapsulated Chip with Polymer Protective

Coating

♦ Up to +30dBm C.W. Power Handling @ +25°C

♦ 50 nS Switching Speed

Description

The MA4SW110, MA4SW210 and MA4SW310 are

series-shunt, broadband, PIN diode switches made with

M/A-COM

Tech’s

Microwave

Integrated Circuit) process. This process allows the

silicon pedestals which form the series - shunt diodes

and vias to be embedded into low loss, low dispersion

glass. By also incorporating small spacing between

circuit elements, the result is an HMIC chip with low

insertion loss and high isolation at frequencies up to

26.5GHz. They are designed for use as moderate

power, high performance switches and provide superior

performance when compared to similar designs that use

discrete components.

The top side of the chip is protected by a polymer

coating for manual or automatic handling and large gold

bond pads help facilitate connection of low inductance

ribbons. The gold metallization on the backside of the

chip allows for attachment via 80/20, gold/tin solder or

conductive silver epoxy.

Parameter

Absolute Maximum

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

- 50V

RF C.W. Incident Power

+30dBm C.W.

Bias Current Per Port

± 50mA

Max. operating conditions for a combination of

RF power, D.C. bias and temperature:

+30dBm CW @ 15mA (per diode) @+85°C

MA4SW210

J2

J3

J1

MA4SW110

J1

J2

MA4SW310

J2

J4

J1

J3

Absolute Maximum Ratings