NPT1012 datasheet(1/8 Pages) MA-COM

부품명	NPT1012

상세설명	Gallium Nitride 28V, 25W RF Power Transistor

PDF	8 Pages

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제조업체	MA-COM [M/A-COM Technology Solutions, Inc.]

홈페이지	http://www.macomtech.com

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NPT1012

NDS-025 Rev. 3, April 2013

NPT1012

Page 1

FEATURES

• Optimized for broadband operation from

DC-4000MHz

• 25W P3dB CW power at 3000MHz

• 16-20W P3dB CW power from 1000-2500MHz in

application board with >45% drain efficiency

• 10-20W P3dB CW power from 30-1000MHz in ap-

plication board with >50% drain efficiency

• High efficiency from 14 - 28V

• 4.0 °C/W RTH with maximum TJ rating of 200 °C

• Robust up to 10:1 VSWR mismatch at all angles

with no device damage at 90 °C flange

• Subject to EAR99 export control

DC – 4000 MHz

25 Watt, 28 Volt

GaN HEMT

Gallium Nitride 28V, 25W RF Power Transistor

Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology

RF Specifications (CW, 3000MHz): VDS = 28V, IDQ = 225mA, TC = 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P3dB

Average Output Power at 3dB Gain Compression

43

44

-

dBm

P1dB

Average Output Power at 1dB Gain Compression

-

43

-

dBm

GSS

Small Signal Gain

12

13

-

dB

h

Drain Efficiency at 3dB Gain Compression

57

65

-

%

VSWR

10:1 VSWR at all phase angles

No damage to the device

Figure 1 - Typical CW Performance in

Load-Pull, VDS = 28V, IDQ = 225mA

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

Figure 2 - Typical CW Performance1 in

Load-Pull, VDS = 28V, IDQ = 225mA

유사한 부품 번호 - NPT1012

제조업체	부품명	데이터시트	상세설명
List of Unclassifed Man...	NPT1012	1,019Kb / 8P	Gallium Nitride 28V, 25W RF Power Transistor
M/A-COM Technology Solu...	NPT1012B	12Mb / 9P	Next generation high power RF semiconductor technology
M/A-COM Technology Solu...	NPT1012	1,019Kb / 8P	25W RF Power Transistor

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M/A-COM Technology Solu...	NPT1004	541Kb / 6P	Gallium Nitride 28V, 45W RF Power Transistor
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