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IXGC16N60C2 데이터시트(PDF) 1 Page - IXYS Corporation

부품명 IXGC16N60C2
상세설명  Electrically Isolated Back Surface
PDF  2 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGC16N60C2 데이터시트(HTML) 1 Page - IXYS Corporation

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© 2004 IXYS All rights reserved
G = Gate
C = Collector
E = Emitter
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
600
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C20
A
I
C110
T
C = 110°C8
A
I
D110
T
C = 110°C (IXGC16N60C2D1 diode)
10
A
I
CM
T
C = 25°C, 1 ms
100
A
SSOA
V
GE = 15 V, TJ = 125°C, RG = 22 Ω
I
CM = 32
A
(RBSOA)
Clamped inductive load
@0.8 V
CES
P
C
T
C = 25°C63
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
F
C
Mounting Force
11..65/2.5..15
N/lb.
V
ISOL
Isolation Voltage; 50/60Hz; t = 1minute; RMS
2500
V
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Weight
2
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C = 250 µA, VCE = VGE
2.5
5.0
V
I
CES
V
CE = VCES
16N60C2
25
µA
V
GE = 0 V
16N60C2D1
50
µA
I
GES
V
CE = 0 V, VGE = ±20 V
±100
nA
V
CE(sat)
I
C = 12 A, VGE = 15 V
2.7
3.0
V
Note 2
T
J=125°C
2.1
V
DS99149A(11/04)
HiPerFASTTM IGBT
C2-Class High Speed
IGBT in ISOPLUS220TM Case
Electrically Isolated Back Surface
IXGC 16N60C2
IXGC 16N60C2D1
V
CES
= 600 V
I
C25
=20 A
V
CE(sat)
= 3.0 V
t
fi(typ)
=35 ns
D1
G
C
E
ISOPLUS 220TM (IXGC)
Isolated back surface*
Features
DCB Isolated mounting tab
UL recognized (E153432)
Meets TO-273 package Outline
High current handling capability
MOS Gate turn-on
- drive simplicity
Epoxy meets UL94V-0 flammability
classification
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
E153432
Preliminary Data Sheet


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