U232 datasheet(1/1 Pages) INTERFET

부품명	U232

상세설명	N-Channel Dual Silicon Junction Field-Effect Transistor

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제조업체	INTERFET [InterFET Corporation]

홈페이지	http://www.interfet.com

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8/2014

U232

N-Channel Dual Silicon Junction Field-Effect Transistor

∙ Differencial Amplifier

∙ Low & Maximum Frequency

Amplifier

Absolute maximum ratings at TA = 25

oC

Reverse Gate Source & Gate Drain Voltage

-50V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

300 mW

Power Derating

1.7 mW/

oC

Storage Temperature Range

-65

oC to +150oC

At 25

oC free air temperature

U232

Process NJ16

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown

Voltage

V(BR)GSS

-50

V

IG = -1 uA, VDS = 0 V

Gate Reverse Current

IGSS

-0.1

nA

VGS = -10 V, VDS = 0 V

Gate Source Cutoff Voltage

VGS(OFF)

-0.5

-4.5

V

VDS = 10 V, VGS = 0 V

Drain Saturation Current

(pulsed)

IDSS

0.5

5

mA

VDS = 10 V, VGS = 0 V

Dynamic Electrical Characteristics

Common-Source Forward

Transconductance

gfs

1

3

mS

VDS = 10 V, VGS = 0 V

f = 1 kHz

Common-Source Input

Capacitance

Ciss

6

pF

VDS = 10V, ID = 5 mA

f = 1 MHz

Common-Source Reverse

Transfer Capacitance

Crss

2

pF

VDS = 10 V, ID = 5 mA

f = 1 MHz

Equivalent Short Circuit Input

Noise Voltage

~eN

80

nV/√Hz VDS = 10 V, ID = 5 mA

f = 100 Hz

Matching Characteristics

Min

Max

Units

Test Conditions

Differencial Gate-Source Voltage

(VGS1-VGS2)

10

mV

VDS = 10 V, ID = -10 mA

Differencial Gate Source Voltage

with Temperature

Δ│VGS1-

VGS2│

ΔT

25

μV/°C

VDG = 10 V, ID = 30 μA

www.interfet.com

715 N. Glenville Dr., Ste. 400

Richardson, TX 75089

(972) 238-9700 Fax (972) 238-5338

Surface Mount Version:

SMPU232

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U232 데이터시트(PDF) 1 Page - InterFET Corporation

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