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LL4150 데이터시트(PDF) 1 Page - Formosa MS |
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LL4150 데이터시트(HTML) 1 Page - Formosa MS |
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1 / 2 page ![]() Formosa MS LL4150 Formosa MS 1 High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 40 V Peak forward surge current tp=1µ s IFSM 4 A Forward current IF 600 mA Average forward current VR=0 IFAV 300 mA Power dissipation PV 500 mW Junction temperature Tj 175 ? Storage temperature range Tstg -65~+175 ? Maximum Thermal Resistance Tj=25? Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mm× 50mm× 1.6mm RthJA 500 K/W |
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