BCW66F datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

BCW 66F

66G

66H

Collector–base voltage (open emitter)

–VCBO

max.

75 V

Collector–emitter voltage (open base)

–VCEO

max.

45 V

Emitter–base voltage (open collector)

–VEBO

max.

Collector current (d.c.)

–I C

max. 800

800

800 mA

Total power dissipation at Tamb = 25°C

Ptot

max

225

225 mW

Storage temperature

Tstg

–55 to +150

° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

556

556 °C/mW

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

–IC = 10 mA; IB = 0

–V(BR)CEOmin.

45 V

Collector–emitter breakdown voltage

–IC = 10 mA; VEB = 0

–V(BR)CES min.

75 V

Emitter–base breakdown voltage

–IE = 10 mA; IC = 0

–V(BR)EBO min.

Collector cut–off current

–VCE = 45 V; IC = 0 V

–ICES

max.

20 nA

Emitter cut–off current

VEB = 4 V; IC =0

IEBO

max.

20 nA

Output capacitance at f = 1 MHz

IE = 0; –VCB = 10 V

max.

12 pF

Input capacitance at f = 1 MHz

IC = 0; –VEB = 0.5 V

max.

80 pF

Saturation voltages

–IC = 500 mA; –IB = 50 mA

–VCEsat

max. 0.7

0.7

0.7 V

–IC = 100 mA; –IB = 10 mA

–VCEsat

typ.

0.3

0.3 V

–IC = 500 mA; –IB = 50 mA

–VBEsat

max.

Noise figure at RS = 1 kW

–IC = 0.2 mA; –VCE = 5 V

f = 1 KHz, BW = 200 Hz

max.

10 dB

Current Gain-Bandwidth Product

IC = 20 mA, VCE = 10 V, f = 100 MHz

min.

100

100 MHz

BCW66F, BCW66G

BCW66H

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