BCW60C datasheet(2/3 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–emitter voltage (VBE = 0)

VCES

max.

32 V

Collector–emitter voltage (open base)

VCE0

max.

32 V

Emitter–base voltage (open collector)

VEB0

max.

5 V

Collector current (d.c.)

max.

200 mA

Base current

max.

50 mA

Total power dissipation up to Tamb: 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150° C

Junction temperature

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient*

Rth j–a =

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter cut–off current

VBE = 0; VCE = 32 V

ICES

<20 nA

VBE = 0; VCE = 32V; Tamb = 150°C

ICES

<20 mA

Emitter–base cut–off current

IC = 0; VEB = 4 V

IEB0

<20 nA

Saturation voltages

at IC = 10 mA; IB = 0,25 mA

VCEsat 0,05 to 0,35 V

VBEsat 0,6 to 0,85 V

at IC = 50 mA; IB = 1,25 mA

VCEsat 0,1 to 0,55 V

VBEsat 0,7 to 1,05 V

Transition frequency at f = 100 MHz ·

125 MHz

IC = 10 mA; VCE = 5 V

typ.

250 MHz

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10V

typ.

2,5 pF

Emitter capacitance at f = 1 MHz

IC = Ic = 0; VEB = 0,5 V

typ.

8 pF

Noise figure at RS = 2 kW

typ.

2 dB

IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz

6 dB

BCW60A 60B

60C

60D

D.C. current gain

VCE = 5 V; IC = 10 mAhFE

–

100

VCE = 5 V; IC: 2 mA

hFE

120

180

250

380

220

310

460

630

VCE = 1 V; IC: 50 mA

hFE

100

Input impedance

VCE = 5 V; IC = 2 mA, f = 1 kHz

hie

typ.

2,7

3,6

4,5

7,5 kW

BCW60A BCW60B

BCW60C BCW60D

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