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BCP54 데이터시트(PDF) 1 Page - Continental Device India Limited |
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BCP54 데이터시트(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page ![]() NPN SILICON PLANAR EPITAXIAL TRANSISTORS BCP54 BCP55 BCP56 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP51 BCP52 and BCP53 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BCP54 BCP55 Collector Base Voltage VCBO 45 60 100 Collector Emitter Voltage VCEO 45 60 80 Emitter Base Voltage VEBO Collector Current (DC) IC Collector Current Peak ICM Base Current Peak IBM Power Dissipation upto Tamb=25ºC *PD Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb THERMAL RESISTANCE From junction to ambient *Rth (j-a) From junction to soldering point Rth (j-a) * Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm 2. ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Cut Off Current ICBO VCB=30V, IE=0 100 nA VCB=30V, IE=0, Tj=125ºC 10 µA Emitter Cut Off Current IEBO VEB=5V, IC=0 100 nA DC Current Gain hFE IC=5mA, VCE=2V 63 IC=150mA, VCE=2V 63 250 IC=500mA, VCE=2V 40 DC Current Gain hFE IC=150mA, VCE=2V Group -10 63 160 Group -16 100 250 Collector Emitter Saturation Voltage VCE (sat) IC=0.5A, IB=50mA 0.5 V Base Emitter On Voltage VBE (on) IC=0.5A, VCE=2V 1.0 V Transition Frequency fT IC=10mA, VCE=5V,f=100MHz 130 MHz DC Current Gain Ratio of the Complementary Pairs hFE1/hFE2 IC=150mA, VCE=2V 1.6 BCP54_56Rev011104E - 65 to +150 ºC 94 13 K/W K/W W ºC ºC 150 0.2 1.33 - 65 to +150 UNITS V V V A A A BCP56 5.0 1.0 1.5 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
유사한 부품 번호 - BCP54 |
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