BC328 datasheet(1/5 Pages) CDIL

부품명	BC328

상세설명	SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	5 Pages

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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SILICON PLANAR EPITAXIAL TRANSISTORS

BC327/A BC328 PNP

BC337/A BC338 NPN

TO-92

Plastic Package

General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

DESCRIPTION

SYMBOL

Collector Emitter Voltage

VCEO

Collector Emitter Voltage

VCES

Emitter Base Voltage

VEBO

Collector Current Continuous

IC

Collector Current Peak

ICM

Emitter Current Peak

IEM

Base Current Continuous

IB

Base Current Peak

IBM

Power Dissipation at Ta=25ºC

PD

Derate Above 25ºC

Operating And Storage Junction

Temperature Range

Tj, Tstg

THERMAL RESISTANCE

Junction to Ambient in free air

Rth (j-a)

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

BC327/337

45

BC327A/337A

60

BC328/338

25

Collector Emitter Voltage

VCES

IC=100µA, IE=0

BC327/337

50

BC327A/337A

60

BC328/338

30

Emitter Base Voltage

VEBO

IE=10µA, IC=0

5.0

Collector Cut Off Current

ICBO

VCB=20V, IE=0

VCB=20V, IE=0, TJ=150 ºC

Emitter Cut Off Current

IEBO

VEB=5V, IC=0

Collector Emitter Saturation Voltage

*VCE (sat)

IC=500mA, IB=50mA

Base Emitter On Voltage

*VBE (on)

IC=500mA, VCE=1V

*Pulse Test: Pulse Width < 300

µµs, Duty Cycle < 2%

BC327_338Rev_3 290606D

V

5

V

- 65 to +150

V

mA

ºC/W

1000

mA

V

0.7

1.2

5

µA

1000

mA

100

mA

200

mA

mW

mW/ºC

800

625

5

MAX

200

10

µA

UNITS

V

For Lead Free Parts, Device Part #

will be Prefixed with "T"

BC327/337

BC327A/337A

BC328/338

45

60

25

50

60

30

ºC

UNITS

V

100

V

nA

V

C B

E

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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