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AT45DB641E 데이터시트(PDF) 49 Page - List of Unclassifed Manufacturers |
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AT45DB641E 데이터시트(HTML) 49 Page - List of Unclassifed Manufacturers |
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49 / 72 page ![]() 49 AT45DB641E DS-45DB641E-027E–DFLASH–1/2014 18.5 Program and Erase Characteristics Notes: 1. Values are based on device characterization, not 100% tested in production. 2. Not 100% tested (value guaranteed by design and characterization). 19. Input Test Waveforms and Measurement Levels 20. Output Test Load 1.7V to 3.6V 2.3V to 3.6V Symbol Parameter Min Typ Max Min Typ Max Units t EP Page Erase and Programming Time (256/264 bytes) 10 35 8 35 ms tP Page Programming Time 1.5 5 1.5 3 ms t BP Byte Programming Time 8 8 µs tPE Page Erase Time 7 35 7 35 ms tBE Block Erase Time 25 50 25 50 ms t SE Sector Erase Time 2.5 6.5 2.5 6.5 s tCE Chip Erase Time 80 208 80 208 s tSUSP Suspend Time Program 8 12 8 12 µs Erase 20 30 20 30 t RES Resume Time Program 3 5 3 5 µs Erase 3 5 3 5 t OTPP OTP Security Register Program Time 200 500 200 500 µs AC Driving Levels AC Measurement Level 0.1V CC V CC/2 0.9V CC tR, tF < 2ns (10% to 90%) Device Under Test 30pF |
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