BC301 datasheet(1/3 Pages) CDIL

부품명	BC301

상세설명	NPN EPITAXIAL PLANAR SILICON TRANSISTORS

PDF	3 Pages

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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NPN EPITAXIAL PLANAR SILICON TRANSISTORS

BC300, BC301, BC302

TO-39

Metal Can Package

NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BC300 BC301

BC302

UNITS

Collector Emitter Voltage

VCEO

80

60

45

V

Collector Base Voltage

VCBO

120

90

60

V

Emitter Base Voltage

VEBO

7.0

V

Collector Current

IC

mA

Power Dissipation @ Ta=25ºC

PD

mW

Junction Temperature

Tj

ºC

Storage Temperature Range

Tstg

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

UNITS

MIN

MAX

MIN MAX MIN

MAX

Collector Cut off Current

ICBO

VCB=120V, IE=0

20

n

Α

VCB=90V, IE=0

20

n

Α

VCB=60V, IE=0

20

n

Α

DC Current Gain

hFE

IC=150mA,VCE=10V

BC300/301/302

40

240

BC300/301/302-4

40

80

BC300/301/302-5

IC=150mA,VCE=10V

70

140

BC300/301/302-6

IC=150mA,VCE=10V

120

240

Collector Emitter Sat Voltage

VCE(Sat) IC=150mA,IB=15mA

ALL

0.5

V

DYNAMIC CHARACTERISTICS

Transition Frequency

fT

VCE=10V,IC=50mA,

ALL

f=20MHz

100

400

MHz

BC300

BC301

BC302

500

850

175

-65 to +200

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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