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BC212LB 데이터시트(PDF) 1 Page - Continental Device India Limited |
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BC212LB 데이터시트(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page ![]() Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors ABSOLUTE MAXIMUM RATINGS Rating Rating Rating Rating Rating Symbol Symbol Symbol Symbol Symbol BC212L BC214L Unit Unit Unit Unit Unit Collector Emitter Voltage VCEO 50 30 V Collector Base Voltage VCBO 60 45 V Emitter Base Voltage VEBO -5 - V Collector Current Continuous IC - 100 - mA Total Power Dissipation Ta=25 °C PD - 350 - mW Derate Above 25 °C - 2.8 - mW/ °C Total Power Dissipation Tc=25 °C PD -1 - W Derate Above 25 °C - 8.0 - mW/ °C Operating & Storage Junction Tj,Tstg -55 to +150 °C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) - 357 -° C/W Junction to Case Rth(j-c) - 125 -° C/W BC212L, BC212LA, BC212LB BC214L, BC214LB, BC214LC 1 = EMITTER 2 = COLLECTOR 3 = BASE DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 E C B TO-92 Plastic Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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